專利授權


以濺鍍法及其靶材設計,製作p型半導體類鑚碳薄膜 


專利名稱 半導體性質類鑽碳薄膜之製造方法
專利國家
   專利證書號
美國 US 7,727,798 B1
專利權人 國立台北科技大學
發明人 王錫福、蒲瑞臻、林家綸、許富珽、徐開鴻、吳玉娟、王錫九
應用領域
需求項目









技術摘要


Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 Ω-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.


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