可授權專利


同軸結構與微帶線間的垂直轉接
 Vertical coaxial-to-microstrip Transitions


專利名稱 / Patent Title 同軸結構與微帶線間的垂直轉接
Vertical coaxial-to-microstrip Transitions
專利國家 / Country
   專利證書號 / Registration Number
美國 / US US 10,892,535
專利權人 / Applicant 國立臺北科技大學 / National Taipei University of Technology
發明人 / Inventor 李士修/ Eric S. Li

專利詳細說明
Patent Details

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技術摘要 / Abstract


一種應用於同軸結構至微帶線之間的垂直轉接方法,是將微帶線之信號線待垂直轉接的一端下方的接地層開設一鏤空部而形成一槽孔。在槽孔中形成多個貫穿基板的穿孔,這些穿孔包括一轉接孔及至少一第二穿孔。轉接孔連接微帶線之信號線的一端,並與鏤空部組成第一偏心配置。第二穿孔與鏤空部組成第二偏心配置。將同軸結構的中心導體穿過轉接孔並接觸信號線,而形成一垂直轉接結構。此方法利用第一偏心配置來達到二傳輸線間的場型轉換,以降低其垂直轉接的插入損耗及增加1-dB通帶頻寬,再利用第二穿孔來將槽孔所引起的共振響應移位,可以進一步增加1-dB通帶頻寬。A method for a vertical transition between a coaxial structure and a microstrip line features a slot in the ground plane of the microstrip line and near one end of its signal line. Multiple through holes are created at the substrate within the slot. The multiple through holes include a transition hole next to the end of the signal line, and at least a second hole. The transition hole and the slot are managed to establish a first eccentric configuration to achieve field transformation between the coaxial structure and the microstrip line, which would reduce the insertion loss of the vertical transition at higher frequencies and increase its 1-dB passband. The second hole and the slot are arranged to create a second eccentric configuration, and the second hole is used to relocate a resonance response caused by the slot towards higher frequencies to further increase the 1-dB passband.


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